Crystallized silicon vertical diode on BEOL for access device for confined PCM arrays

ABSTRACT

A method is presented for integrating an electronic component in back end of the line (BEOL) processing. The method includes forming a first electrode over a semiconductor substrate, forming a first electrically conductive material over a portion of the first electrode, and forming a second electrically conductive material over the first electrically conductive material, where the first and second electrically conductive materials define a p-n junction. The method further includes depositing a second electrode between a set of spacers and in direct contact with the p-n-junction, depositing a phase change material over the p-n junction and in direct contact with the second electrode, and forming a third electrode over a portion of the phase change material.

BACKGROUND Technical Field

The present invention relates generally to semiconductor devices, andmore specifically, to forming a crystallized silicon vertical diode onback end of the line (BEOL) processing for an access device combinedwith a phase change material (PCM) memory.

Description of the Related Art

In order to increase density of memory technologies (both volatile andnonvolatile), a crosspoint design can be employed. In such an optimizeddesign, wordlines and bitlines run at a minimum pitch=2F, where F refersto a lithographic minimum feature size, and storage elements are placedbetween these perpendicularly oriented memory lines at theircrosspoints. Two designs are conventionally employed in such memorytechnologies. One is a nano-crossbar design, which refers to a designwhere memory lines run at sub-lithographic pitches. The other design isa 3D design, which refers to a design where memory lines run atlithographic pitches, with multiple layers of memories being provided.In either design case, two device components are needed at theintersection of the memory lines. That is, a memory element, whichrefers to an element that is used to store data/information and arectifying element or access device.

SUMMARY

In accordance with an embodiment, a method is provided for integratingan electronic component in back end of the line (BEOL) processing. Themethod includes forming a first electrode over a semiconductorsubstrate, forming a first electrically conductive material over aportion of the first electrode, forming a second electrically conductivematerial over the first electrically conductive material, where thefirst and second electrically conductive materials define a p-njunction, depositing a second electrode between a set of spacers and indirect contact with the p-n-junction, depositing a phase change materialover the p-n junction and in direct contact with the second electrode,and forming a third electrode over a portion of the phase changematerial.

In accordance with another embodiment, a method is provided forintegrating an electronic component in back end of the line (BEOL)processing. The method includes forming a first electrode over asemiconductor substrate, forming a first electrically conductivematerial over the first electrode, forming an undoped intrinsicsemiconductor layer over the first electrically conductive material, andforming a second electrically conductive material over the undopedintrinsic semiconductor layer, where the first electrically conductivematerial, the undoped intrinsic semiconductor layer, and the secondelectrically conductive material define a p-i-n junction. The methodfurther includes depositing a second electrode between a set of spacersand in direct contact with the p-i-n-junction, depositing a phase changematerial over the p-i-n junction and in direct contact with the secondelectrode, and forming a third electrode over a portion of the phasechange material.

In accordance with yet another embodiment, a semiconductor structure ispresented for integrating an electronic component in back end of theline (BEOL) processing. The semiconductor structure includes a firstelectrode formed over a semiconductor substrate, a first electricallyconductive material formed over a portion of the first electrode, asecond electrically conductive material formed over the firstelectrically conductive material, where the first and secondelectrically conductive materials define a p-n junction, a secondelectrode deposited between a set of spacers and in direct contact withthe p-n-junction, a phase change material deposited over the p-njunction and in direct contact with the second electrode, and a thirdelectrode formed over a portion of the phase change material.

It should be noted that the exemplary embodiments are described withreference to different subject-matters. In particular, some embodimentsare described with reference to method type claims whereas otherembodiments have been described with reference to apparatus type claims.However, a person skilled in the art will gather from the above and thefollowing description that, unless otherwise notified, in addition toany combination of features belonging to one type of subject-matter,also any combination between features relating to differentsubject-matters, in particular, between features of the method typeclaims, and features of the apparatus type claims, is considered as tobe described within this document.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The invention will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a semiconductor structure having anopening formed through the interlayer dielectric (ILD) to expose a topsurface of a first metal line, in accordance with an embodiment of thepresent invention;

FIG. 2 is a cross-sectional view of the semiconductor structure of FIG.1 where doped silicon (Si) is deposited and converted to polysilicon(poly-Si) by an excimer laser, in accordance with an embodiment of thepresent invention;

FIG. 3 is a cross-sectional view of the semiconductor structure of FIG.2 where the polysilicon is etched, in accordance with an embodiment ofthe present invention;

FIG. 4 is a cross-sectional view of the semiconductor structure of FIG.3 where a doped poly-Si layer is deposited, in accordance with anembodiment of the present invention;

FIG. 5 is a cross-sectional view of the semiconductor structure of FIG.4 where spacers are formed within the opening and over the doped poly-Silayer, in accordance with an embodiment of the present invention;

FIG. 6 is a cross-sectional view of the semiconductor structure of FIG.5 where an electrode is deposited between the spacers, in accordancewith an embodiment of the present invention;

FIG. 7 is a cross-sectional view of the semiconductor structure of FIG.6 where a phase change material (PCM) is deposited over the structure,in accordance with an embodiment of the present invention;

FIG. 8 is a cross-sectional view of the semiconductor structure of FIG.7 where a second metal line is deposited crosswise with respect to thefirst metal line, in accordance with an embodiment of the presentinvention;

FIG. 9 is a cross-sectional view of the semiconductor structure havingan amorphous silicon (a-Si) doped layer deposited over a first metalline, in accordance with another embodiment of the present invention;

FIG. 10 is a cross-sectional view of the semiconductor structure of FIG.9 where the doped a-Si is converted to polysilicon (poly-Si) by anexcimer laser, in accordance with an embodiment of the presentinvention;

FIG. 11 is a cross-sectional view of the semiconductor structure of FIG.10 where a Si layer is deposited and exposure to an excimer laser takesplace, in accordance with an embodiment of the present invention;

FIG. 12 is a cross-sectional view of the semiconductor structure of FIG.11 where the Si is etched to form a recess, in accordance with anembodiment of the present invention;

FIG. 13 is a cross-sectional view of the semiconductor structure of FIG.12 where doped poly-Si is deposited, in accordance with an embodiment ofthe present invention;

FIG. 14 is a cross-sectional view of the semiconductor structure of FIG.13 where spacers are formed within the recess and over the dopedpoly-Si, in accordance with an embodiment of the present invention;

FIG. 15 is a cross-sectional view of the semiconductor structure of FIG.14 where an electrode is deposited between the spacers, in accordancewith an embodiment of the present invention;

FIG. 16 is a cross-sectional view of the semiconductor structure of FIG.15 where a phase change material (PCM) is deposited over the structureand a second metal line is deposited crosswise with respect to the firstmetal line, in accordance with an embodiment of the present invention;

FIG. 17 is a perspective view of a crossbar array with access devicesand memory elements formed between the metal lines, in accordance withan embodiment of the present invention; and

FIG. 18 is a schematic block diagram of an embodiment of a computingsystem adapted for performing the method for employing a vertical diodewith a phase change memory array, in accordance with an embodiment ofthe present invention.

Throughout the drawings, same or similar reference numerals representthe same or similar elements.

DETAILED DESCRIPTION

Embodiments in accordance with the present invention provide methods anddevices for creating a memory architecture incorporated or integratedwith a cross-point array architecture. A cross-point array architecturehas the potential for achieving a fast, random access, nonvolatilememory with the highest density and smallest cell size possible.Nonvolatile resistance memory elements that can be placed at across-point of word-lines and bit-lines helps realize this potential. Ifthis memory element is no larger than the pitch of these lines (2F), thecell is 2F×2F (4F²) in area.

Embodiments in accordance with the present invention provide methods anddevices for creating a memory architecture by employing a poly-silicon(poly-Si) diode compatible with back end of the line (BEOL) processing.The poly-Si diode can be incorporated or integrated in the cross-pointarray architecture. The poly-Si diode can be a vertically integrated p-njunction with confined phase change memory. Alternatively, the poly-Sidiode can be a vertically integrated p-i-n junction with confined phasechange memory. Thus, various structures of diodes with verticallyintegrated memory elements are introduced for BEOL processing.

Embodiments in accordance with the present invention provide methods anddevices for employing phase change based materials in nonvolatile randomaccess memory cells. Phase change materials, such as chalcogenides, canbe caused to change phase between an amorphous state and a crystallinestate by application of electrical current at levels suitable forimplementation in integrated circuits. The generally amorphous state ischaracterized by higher resistivity than the generally crystallinestate, which can be readily sensed to indicate data.

Phase change materials are capable of being switched between a firststructural state in which the material is in a generally amorphous solidphase, and a second structural state in which the material is in agenerally crystalline solid phase in the active region of the cell. Theterm “amorphous” is used to refer to a relatively less orderedstructure, more disordered than a single crystal, which has detectablecharacteristics such as higher electrical resistivity than thecrystalline phase. The term “crystalline” is used to refer to arelatively more ordered structure, more ordered than in an amorphousstructure, which has detectable characteristics such as lower electricalresistivity than the amorphous phase. Other material characteristicsaffected by the change between amorphous and crystalline phases includeatomic order, free electron density and activation energy. The materialcan be switched into either different solid phases or mixtures of two ormore solid phases, providing a gray scale between completely amorphousand completely crystalline states.

The change from the amorphous to the crystalline state is generally alower current operation, requiring a current that is sufficient to raisethe phase change material to a level between a phase transitiontemperature and a melting temperature. The change from crystalline toamorphous, referred to as “reset,” is generally a higher currentoperation, which includes a short high current density pulse to melt orbreak down the crystalline structure, after which the phase changematerial cools quickly, quenching the phase change process, thusallowing at least a portion of the phase change structure to stabilizein the amorphous state. It is desirable to minimize the magnitude of thereset current used to cause transition of the phase change material froma crystalline state to an amorphous state. The magnitude of the neededreset current can be reduced by reducing the volume of the active regionin the phase change material element in the cell.

Examples of semiconductor materials that can be employed in forming suchstructures include silicon (Si), germanium (Ge), silicon germaniumalloys (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC),compound semiconductors and/or II-VI compound semiconductors. III-Vcompound semiconductors are materials that include at least one elementfrom Group III of the Periodic Table of Elements and at least oneelement from Group V of the Periodic Table of Elements. II-VI compoundsemiconductors are materials that include at least one element fromGroup II of the Periodic Table of Elements and at least one element fromGroup VI of the Periodic Table of Elements.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps/blocks can be varied within the scope of the present invention. Itshould be noted that certain features cannot be shown in all figures forthe sake of clarity. This is not intended to be interpreted as alimitation of any particular embodiment, or illustration, or scope ofthe claims.

FIG. 1 is a cross-sectional view of a semiconductor structure having anopening formed through the interlayer dielectric (ILD) to expose a topsurface of a first metal line, in accordance with an embodiment of thepresent invention.

In various exemplary embodiments, a semiconductor structure 5 includesan interlayer dielectric (ILD) 12 deposited over a substrate 10. A firstmetal layer or first metal line 14 is formed over the HD 12. A secondILD layer 16 is formed over the metal line 14. An opening or recess 18is formed through the ILD 16 to expose a top surface 15 of the firstmetal line 14.

The semiconductor substrate 10 that is employed in the presentapplication can include any semiconductor material. Illustrativeexamples of semiconductor materials that can be employed for thesemiconductor substrate 10 include, but are not limited to, Si, SiGealloys, SiGeC, SiC, Ge alloy, GaSb, GaP, GaN, GaAs, InAs, INP, AlN andall other III-V or II-VI compound semiconductors. In one embodiment, thesemiconductor substrate 10 can include a multilayered stack of suchsemiconductor materials. In some embodiments, the semiconductorsubstrate 10 can include a bulk semiconductor substrate. By “bulk” it ismeant the entirety of the semiconductor substrate 10 from one surface toan opposite surface is composed of a semiconductor material. In otherembodiments, the semiconductor substrate 10 can include asemiconductor-on-insulator (SOI) substrate.

In various embodiments, the height of the ILD oxide 16 can be reduced bychemical-mechanical polishing (CMP) and/or etching. Therefore, theplanarization process can be provided by CMP. Other planarizationprocess can include grinding and polishing.

In one or more embodiments, the ILDs 12, 16 can have a thickness in therange of about 10 nm to about 100 nm, or in the range of about 10 nm toabout 50 nm.

The ILDs 12, 16 can be selected from the group consisting of siliconcontaining materials such as SiO₂, Si₃N₄, SiC, SiCO, SiCOH, and SiCHcompounds, the above-mentioned silicon containing materials with some orall of the Si replaced by Ge, carbon doped oxides, inorganic oxides,inorganic polymers, hybrid polymers, organic polymers such as polyamidesor SiLK™, other carbon containing materials, organo-inorganic materialssuch as spin-on glasses and silsesquioxane-based materials, anddiamond-like carbon (DLC), also known as amorphous hydrogenated carbon,α-C:H. Additional choices for the ILDs 12, 16 include any of theaforementioned materials in porous form, or in a form that changesduring processing to or from being porous and/or permeable to beingnon-porous and/or non-permeable.

FIG. 2 is a cross-sectional view of the semiconductor structure of FIG.1 where doped silicon (Si) is deposited and converted to polysilicon(poly-Si) by an excimer laser, in accordance with an embodiment of thepresent invention.

Amorphous silicon (a-Si) 22 is deposited within the opening 18 and overthe ILD portions 16. Radiation is applied to the a-Si 22 via an excimerlaser 20. The a-Si 22 can be doped before application of the excimerlaser 20. The excimer laser 20 converts the a-Si to, e.g., polysilicon(poly-Si) layer 22. Poly-Si layer 22 can be, e.g., a doped poly-Si layer22.

A laser is an electronic-optical device that emits coherent radiation.In some embodiments, a laser emits light in a narrow, low-divergencebeam and with a defined wavelength (corresponding to a particular colorif the laser operates in the visible spectrum). In some embodiments, thelaser type that is employed in the laser annealing method is an excimerlaser 20. Excimer lasers can be powered by a chemical reaction involvingan excited dimer, or excimer, which is a short-lived dimeric orheterodimeric molecule formed from two species (atoms), at least one ofwhich is in an excited electronic state. Commonly used excimer moleculesinclude F₂ (fluorine, emitting at 157 nm), and noble gas compounds (ArF(193 nm), KrCl (222 nm), KrF (248 nm), XeCl (308 nm), and XeF (351 nm)).

The excimer laser 20 can be generated from at least one of the excimersselected from the group consisting of Ar₂, Kr₂, F₂, Xe₂, ArF, KrF, XeBr,XeCl, XeCl, XeF, CaF₂, KrCl, and Cl₂ wherein the wavelength of theexcimer laser is in the range from about 50 to about 300 nm.

FIG. 3 is a cross-sectional view of the semiconductor structure of FIG.2 where the polysilicon is etched, in accordance with an embodiment ofthe present invention.

In various exemplary embodiments, the poly-Si 22 is etched such that apoly-Si portion or section 24 remains between the ILDs 16. A top surface17 of the ILDs 16 is also exposed. Moreover, an opening or recess 26 isformed over the poly-Si layer 24 and in between the ILDs 16. The layer24 can be a p-doped or an n-doped Si layer.

FIG. 4 is a cross-sectional view of the semiconductor structure of FIG.3 where a doped poly-Si layer is deposited, in accordance with anembodiment of the present invention.

In various exemplary embodiments, a doped poly-Si layer 28 is depositedor formed over the doped poly-Si section 24. In an alternativeembodiment, Si can be implanted and then activated. The layer 28 can bea p-doped or an n-doped layer. In one embodiment, layers 24, 28 areoppositely doped. Layers 24, 28 can be referred to as electricallyconductive material layers.

The poly-Si layer 24 and the poly-Si layer 28 together form a p-njunction 29. The p-n junction 29 is a boundary or interface between twotypes of semiconductor materials, p-type and n-type, inside a singlecrystal of semiconductor. The “p” (positive) side includes an excess ofholes, while the “n” (negative) side includes an excess of electrons inthe outer shells of the electrically neutral atoms there. This allowselectrical current to pass through the junction only in one direction.The p-n junction 29 can be created by doping, for example by ionimplantation or diffusion of dopants. The p-n junction 29 can also bereferred to as a p-n junction diode. The diode conducts current in onlyone direction, and it is made by joining a p-type semiconducting layer(e.g., layer 24) to an n-type semiconducting layer (e.g., layer 28).

FIG. 5 is a cross-sectional view of the semiconductor structure of FIG.4 where spacers are formed within the opening and over the doped poly-Silayer, in accordance with an embodiment of the present invention.

In various exemplary embodiments, spacers 30 can be formed adjacent theILDs 16 and over the doped poly-Si layer 28 or over the p-n junction 29.The formation of the spacers 30 results in gap 32 between the spacers30.

Spacers 30 can be, e.g., a nitride film (i.e., nitride layer). In anembodiment, the spacers 30 can be an oxide, for example, silicon oxide(SiO), a nitride, for example, a silicon nitride (SiN), or anoxynitride, for example, silicon oxynitride (SiON). In an embodiment,the spacers 30 can be, e.g., silicon oxycarbonitride (SiOCN), SiBCN, orsimilar film types. In some exemplary embodiments, the spacers 30 caninclude a material that is resistant to some etching processes such as,for example, hydrogen fluoride (HF) chemical etching or chemical oxideremoval etching.

FIG. 6 is a cross-sectional view of the semiconductor structure of FIG.5 where an electrode is deposited between the spacers, in accordancewith an embodiment of the present invention.

In various exemplary embodiments, the electrode 34 contacts an uppersurface of the p-n junction 29. The height of the electrode 34 can bereduced by chemical-mechanical polishing (CMP) and/or etching.Therefore, the planarization process can be provided by CMP. Otherplanarization process can include grinding and polishing.

The electrode 34 can be, e.g., formed from Ta, Ti/TiN, W, WN, TaN,polysilicon, doped polysilicon, amorphous silicon, doped amorphoussilicon, or any other suitable material, or any other conductivematerial. Alternatively, the electrode 34 can be, e.g., any suitableconductive material or materials, e.g., Ag, Al, Cu, Ta, TaN, Ti, TiN,Al, W or any other suitable material, and may be deposited or formed inany suitable manner.

FIG. 7 is a cross-sectional view of the semiconductor structure of FIG.6 where a phase change material (PCM) is deposited over the structure,in accordance with an embodiment of the present invention.

In various exemplary embodiments, a phase change material 36 isdeposited over the structure. The phase change material 36 contacts anupper surface of the ILDs 16, an upper surface of the spacers 30, and anupper surface of the electrode 34. The phase change material 36 extendsa length of the ILD 12 and extends a length of the first metal line 14.

Phase change material 36 can be changed from one phase state to anotherby application of electrical pulses. A shorter, higher amplitude pulsetends to change the phase change material 36 to a generally amorphousstate, and is referred to as a reset pulse. A longer, lower amplitudepulse tends to change the phase change material to a generallycrystalline state, and is referred to as a program pulse. The energy ina shorter, higher amplitude pulse is high enough to melt the material inthe active volume, and short enough to allow the material to solidify inthe amorphous state.

The phase change material 36 can include chalcogenide based materialsand other materials. Chalcogens include any of the four elements oxygen(O), sulfur (S), selenium (Se), and tellurium (Te), forming part ofgroup VI of the periodic table. Chalcogenides include compounds of achalcogen with a more electropositive element or radical. Chalcogenidealloys include combinations of chalcogenides with other materials suchas transition metals. A chalcogenide alloy usually includes one or moreelements from column six of the periodic table of elements, such asgermanium (Ge) and tin (Sn). Often, chalcogenide alloys includecombinations including one or more of antimony (Sb), gallium (Ga),indium (In), and silver (Ag). Phase change based memory materials caninclude alloys of: Ga/Sb, In/Sb, In/Se, Sb/Te, Ge/Te, Ge/Sb/Te,In/Sb/Te, Ga/Se/Te, Sn/Sb/Te, In/Sb/Ge, Ag/In/Sb/Te, Ge/Sn/Sb/Te,Ge/Sb/Se/Te and Te/Ge/Sb/S. In the family of Ge/Sb/Te alloys, a widerange of alloy compositions may be workable.

Chalcogenides and other phase change materials are doped with impuritiesin some embodiments to modify conductivity, transition temperature,melting temperature, and other properties of memory elements using thedoped chalcogenides. Representative impurities employed for dopingchalcogenides include nitrogen, silicon, oxygen, silicon dioxide,silicon nitride, copper, silver, gold, aluminum, aluminum oxide,tantalum, tantalum oxide, tantalum nitride, titanium and titanium oxide.

FIG. 8 is a cross-sectional view of the semiconductor structure of FIG.7 where a second metal line is deposited crosswise with respect to thefirst metal line, in accordance with an embodiment of the presentinvention.

In various exemplary embodiments, a second metal layer or metal line ortop electrode 38 is deposited on a top surface 37 of the phase changematerial 36. Thus, a p-n junction 29 with a phase change material 36 aresandwiched between the bottom electrode 14 and the top electrode 38 of across-point array. The p-n junction 29 can be referred to as the accessdevice and the phase change material 36 can be referred to as the memoryelement. The p-n junction 29 is fabricated in series with the PCM 36 tobe compatible with a BEOL wafer stack.

The first metal line or bottom electrode 14 can be, e.g., a boron-dopedor other p-type polysilicon electrode that is in contact with a lowerend face of the doped poly-Si switching medium. The second metal line ortop electrode 38 can be, e.g., a conductive layer containing silver(Ag). Although silver can be employed, it will be understood that thetop electrode 14 can be formed from various other suitable metals, suchas gold (Au), nickel (Ni), aluminum (Al), chromium (Cr), iron (Fe),manganese (Mn), tungsten (W), vanadium (V), and cobalt (Co). It ispreferred that all or part of the portions of bottom electrode 14contacting the access device include an electrode material, such as TiN,or another conductor selected for compatibility with the phase changematerial. Other types of conductors can be employed for the top andbottom electrodes 38, 14, including for example aluminum and aluminumalloys, TiN, TaN, TiAlN or TaAlN. Other conductors that can be employedinclude one or more elements selected from the group consisting of Ti,W, Mo, Al, Ta, Cu, Pt, Ir, La, Ni, Ru and O.

FIG. 9 is a cross-sectional view of the semiconductor structure havingan amorphous silicon (a-Si) doped layer deposited over a first metalline, in accordance with another embodiment of the present invention.

In an alternative embodiment, a semiconductor structure 40 includes aninterlayer dielectric (ILD) 12 deposited over a substrate 10. A firstmetal layer or metal line 14 is formed over the ILD 12. A dopedamorphous silicon (a-Si) layer 42 is then deposited or formed over themetal line 14.

FIG. 10 is a cross-sectional view of the semiconductor structure of FIG.9 where the doped a-Si is converted to polysilicon (poly-Si) by anexcimer laser, in accordance with an embodiment of the presentinvention.

In various exemplary embodiments, the doped a-Si layer 42 is convertedto a poly-Si doped layer 44. An excimer laser, as described above, canbe employed to convert the doped a-Si layer 42 to the poly-Si dopedlayer 44.

FIG. 11 is a cross-sectional view of the semiconductor structure of FIG.10 where a Si layer is deposited and exposure to an excimer laser takesplace, in accordance with an embodiment of the present invention.

In various exemplary embodiments, an ILD 46 is formed over the poly-Sidoped layer 44. An opening is formed within the ILD 46 and filled withsilicon (Si) material 50. The Si material 50 is exposed to radiation 48from an excimer laser. The Si material 50 can be an undoped intrinsicsemiconductor layer or region.

FIG. 12 is a cross-sectional view of the semiconductor structure of FIG.11 where the Si is etched to form a recess, in accordance with anembodiment of the present invention.

In various exemplary embodiments, the Si material 50 is etched such thata Si material section 52 remains between the ILDs 46. Also, a topsurface 47 of the ILDs 46 is exposed. The etching of the Si material 50also results in opening or recess 54 formed between the ILDs 46. Section52 can be referred to as the undoped intrinsic semiconductor layer orregion.

FIG. 13 is a cross-sectional view of the semiconductor structure of FIG.12 where doped poly-Si is deposited, in accordance with an embodiment ofthe present invention.

In various exemplary embodiments, doped poly-Si 56 is deposited over theSi material section 52. This forms a p-i-n junction 59 over the bottomelectrode 14. The p-i-n junction 59 includes three differently dopedregions. Namely, there is an intrinsic or undoped layer 52 sandwichedbetween a p-doped region (e.g., layer 44) and an n-doped region (e.g.,layer 56). The p-i-n junction 59 can be fabricated from, e.g., amorphoussilicon with a band gap of about 1.8 eV. The p-i-n junction 59 can bereferred to as a p-i-n junction diode. A p-i-n diode is a diode with awide, undoped intrinsic semiconductor region between a p-typesemiconductor and an n-type semiconductor region. Therefore, acrystallized silicon vertical diode can be constructed in combinationwith a phase change material (FIG. 16) for BEOL processing.

FIG. 14 is a cross-sectional view of the semiconductor structure of FIG.13 where spacers are formed within the recess and over the dopedpoly-Si, in accordance with an embodiment of the present invention.

In various exemplary embodiments, spacers 58 are formed within therecess 54 and over the doped poly-Si 56 or over the p-i-n junction 59.The formation of the spacers 58 results in gap 60 between the spacers58.

FIG. 15 is a cross-sectional view of the semiconductor structure of FIG.14 where an electrode is deposited between the spacers, in accordancewith an embodiment of the present invention.

In various exemplary embodiments, the electrode 62 contacts an uppersurface of the p-i-n junction 59. The height of the electrode 62 can bereduced by chemical-mechanical polishing (CMP) and/or etching.Therefore, the planarization process can be provided by CMP. Otherplanarization process can include grinding and polishing.

The electrode 62 can be, e.g., formed from Ta, Ti/TiN, W, WN, TaN,polysilicon, doped polysilicon, amorphous silicon, doped amorphoussilicon, or any other suitable material, or any other conductivematerial. Alternatively, the electrode 62 can be, e.g., any suitableconductive material or materials, e.g., Ag, Al, Cu, Ta, TaN, Ti, TiN,Al, W or any other suitable material, and may be deposited or formed inany suitable manner.

FIG. 16 is a cross-sectional view of the semiconductor structure of FIG.15 where a phase change material (PCM) is deposited and a second metalline is deposited crosswise with respect to the first metal line, inaccordance with an embodiment of the present invention.

In various exemplary embodiments, a phase change material 64 isdeposited over the structure. The phase change material 64 contacts anupper surface of the ILDs 16, an upper surface of the spacers 30, and anupper surface of the electrode 62.

In various exemplary embodiments, a second metal layer or metal line 66is deposited over the phase change material 64, as well as over thespacers 58 and over a portion of the ILDs 46. The second metal layer 66can be referred to as the top electrode. The p-i-n junction 59 isfabricated in series with the PCM 64 to be compatible with a BEOL waferstack.

Therefore, the methods and structures describe herein (FIGS. 1-16)enable a silicon p-n diode or a silicon p-i-n diode constructed from lowtemperature deposited materials that are annealed with laser exposure.This results in fabrication of large polycrystalline materials. Duringthis laser exposure, silicon layers reach a partial to complete melt,thus ensuring a large polycrystalline material is for ed. Anotheradvantage of employing an excimer laser is that heat remains confined inthe silicon layers and does not spread through the device. The excimerlaser also enables crystallization of silicon on a BEOL wafer. Stateddifferently, methods and structures are provided for fabricating across-point array of p-n and p-i-n or Schottky silicon diodes in serieswith PCM memories with processes compatible with BEOL wafer stack andscalable to small pitches.

FIG. 17 is a perspective view of a crossbar array with access devicesand memory elements formed between the metal lines (top and bottomelectrodes accordance with an embodiment of the present invention.

In various example embodiments, the semiconductor structure 76, 78represents a memory cell incorporated between a plurality of bit lines72 and a plurality of word lines 74. Thus, the array 70 is obtained byperpendicular conductive wordlines (rows) 74 and bitlines (columns) 72,where a cell structure 76, 78 with a memory element exists at theintersection between each row and column. The cell structure 76, 78 withthe memory element can be accessed for read and write by biasing thecorresponding wordline 74 and bitline 72. The cell structure includes anaccess device 76 and a memory element 78 (or mushroom memory element).The access device can be the p-n junction 29 or p-i-n junction 59described above or a Schottky diode. The mushroom memory element can bethe phase change materials 36, 64 described above and can be a singleunit or single continuous component that extends over each of theindividual access devices 29, 59.

In order to construct a large scale crossbar array, each cross pointneeds to have a high resistance (or low leakage current). Otherwise, avoltage drop across the metal lines becomes an issue. Resistive randomaccess memory devices (ReRAM) devices usually have low switchingresistance (˜kOhm) due to a filamentary nature. This demands lineresistance reduction beyond the conventional back end of line (BEOL) toenable large crossbar array structures. The exemplary embodiments of thepresent invention alleviate this issue by lodging or wedging an accessdevice having a phase change material at the intersection of thewordlines and bitlines (or op and bottom electrodes). Moreover, emergingmemories can be fabricated in the BEOL at relatively low temperatures,which allows for easy integration with CMOS devices and stacking in 3D.For all these reasons, vertical diodes integrated with PCM are promisingnot only for nonvolatile memories, but also for computing memories, thusallowing for fast data access and for computing architectures blurring adistinction between memory and computing circuits, such as nonvolatilememristive logic computation or neuromorphic networks.

FIG. 18 is a schematic block diagram of an embodiment of a computingsystem adapted for performing the method for employing a vertical diodewith a phase change memory array, in accordance with an embodiment ofthe present invention.

The system 800 schematically represents a computerized unit 801, e.g., ageneral-purpose computer. In exemplary embodiments, in terms of hardwarearchitecture, the unit 801 includes a processor 805, memory 810 coupledto a PCM memory controller 815, and one or more input and/or output (PO)devices 840, 845, 850, 855 (or peripherals) that are communicativelycoupled via a local input/output controller 835. The input/outputcontroller 835 can be, but is not limited to, one or more buses or otherwired or wireless connections. The input/output controller 835 can haveadditional elements, which are omitted for simplicity, such ascontrollers, buffers (caches), drivers, repeaters, and receivers, toenable communications. Further, the local interface can include address,control, and/or data connections to enable appropriate communicationsamong the components.

The processor 805 is a hardware device for executing software,particularly that stored in PCM memory 810. The processor 805 can be anycustom made or commercially available processor, a central processingunit (CPU), an auxiliary processor among several processors associatedwith the computer 801, a semiconductor based microprocessor (in the formof a microchip or chip set), or generally any device for executingsoftware instructions.

The PCM memory 810 can include any one or combination of volatile memoryelements (e.g., random access memory) and nonvolatile memory elements.The PCM memory 810 can incorporate electronic, magnetic, optical, and/orother types of storage media. Note that the PCM memory 810 can have adistributed architecture, where various components are situated remotefrom one another, but can be accessed by the processor 805.

The software in memory 810 can include one or more separate programs,each of which includes an ordered listing of executable instructions forimplementing logical functions. The software in the memory 810 includesmethods described herein in accordance with exemplary embodiments and asuitable operating system (OS) 811. The OS 811 essentially controls theexecution of other computer programs, and provides scheduling,input-output control, file and data management, memory management, andcommunication control and related services.

The methods described can be in the form of a source program, executableprogram (object code), script, or any other entity including a set ofinstructions to be performed. When in a source program form, then theprogram needs to be translated via a compiler, assembler, interpreter,or the like, as known per se, which can or cannot be included within thememory 810, so as to operate properly in connection with the OS 811. Themethods can be written as an object oriented programming language, whichhas classes of data and methods, or a procedure programming language,which has routines, subroutines, and/or functions.

A conventional keyboard 850 and mouse 855 can be coupled to theinput/output controller 835. Other I/O devices 840-855 can includesensors (especially in the case of network elements), e.g., hardwaredevices that produce a measurable response to a change in a physicalcondition like temperature or pressure (physical data to be monitored).The analog signal produced by the sensors is digitized by ananalog-to-digital converter and sent to controllers 835 for furtherprocessing. Sensor nodes are ideally small, consume low energy, areautonomous and operate unattended.

The I/O devices 840-855 can further include devices that communicateboth inputs and outputs. The system 800 can further include a displaycontroller 825 coupled to a display 830. In the exemplary embodiments,system 800 can further include a network interface or transceiver 860for coupling to a network 865.

The network 865 transmits and receives data between the unit 801 andexternal systems. The network 865 can be implemented in a wirelessfashion, e.g., using wireless protocols and technologies, such as IEEE802.15.4 or similar. The network 865 can be a fixed wireless network, awireless local area network (LAN), a wireless wide area network (WAN) apersonal area network (PAN), a virtual private network (VPN), intranetor other suitable network system and includes equipment for receivingand transmitting signals.

When the unit 801 is in operation, the processor 805 can be configuredto execute software stored within the PCM memory 810, to communicatedata to and from the PCM memory 810, and to generally control operationsof the computer 801 pursuant to the software. The methods describedherein and the OS 811, in whole or in part are read by the processor805, usually buffered within the processor 805, and then executed. Whenthe methods described herein are implemented in software, the methodscan be stored on any computer readable medium, such as storage 820, foruse by or in connection with any computer related system or method.

Regarding FIGS. 1-15, deposition is any process that grows, coats, orotherwise transfers a material onto the wafer. Available technologiesinclude, but are not limited to, thermal oxidation, physical vapordeposition (PVD), chemical vapor deposition (CVD), electrochemicaldeposition (ECD), molecular beam epitaxy (MBE) and more recently, atomiclayer deposition (ALD) among others. As used herein, “depositing” caninclude any now known or later developed techniques appropriate for thematerial to be deposited including but not limited to, for example:chemical vapor deposition (CVD), low-pressure CVD (LPCVD),plasma-enhanced CVD (PECVD), semi-atmosphere CVD (SACVD) and highdensity plasma CVD (HDPCVD), rapid thermal CVD (RTCVD), ultra-highvacuum CVD (UHVCVD), limited reaction processing CVD (LRPCVD),metal-organic CVD (MOCVD), sputtering deposition, ion beam deposition,electron beam deposition, laser assisted deposition, thermal oxidation,thermal nitridation, spin-on methods, physical vapor deposition (PVD),atomic layer deposition (ALD), chemical oxidation, molecular beamepitaxy (MBE), plating, evaporation.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps/blocks can be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an elementsreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical mechanisms (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which include multiple copies of the chipdesign in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer to beetched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present embodiments. The compounds withadditional elements will be referred to herein as alloys. Reference inthe specification to “one embodiment” or “an embodiment” of the presentinvention, as well as other variations thereof, means that a particularfeature, structure, characteristic, and so forth described in connectionwith the embodiment is included in at least one embodiment of thepresent invention. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular forms “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example, if the device in theFIGS. is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Having described preferred embodiments of a method for integrating anelectronic component in back end of the line (BEOL) processing (whichare intended to be illustrative and not limiting), it is noted thatmodifications and variations can be made by persons skilled in the artin light of the above teachings. It is therefore to be understood thatchanges may be made in the particular embodiments described which arewithin the scope of the invention as outlined by the appended claims.Having thus described aspects of the invention, with the details andparticularity required by the patent laws, what is claimed and desiredprotected by Letters Patent is set forth in the appended claims.

What is claimed is:
 1. A method for integrating an electronic componentin back end of the line (BEOL) processing, the method comprising:forming a first electrode over a semiconductor substrate; forming afirst electrically conductive material over a portion of the firstelectrode; forming a second electrically conductive material over thefirst electrically conductive material, where the first and secondelectrically conductive materials define a p-n junction; depositing asecond electrode between a set of spacers and in direct contact with thep-n-junction; depositing a phase change material over the p-n junctionand in direct contact with the second electrode; and forming a thirdelectrode over a portion of the phase change material.
 2. The method ofclaim 1, wherein the first electrically conductive material is an n-typepoly-silicon layer.
 3. The method of claim 2, wherein secondelectrically conductive material is a p-type poly-silicon layer.
 4. Themethod of claim 1, further comprising forming the p-n junction and thesecond electrode between interlayer dielectric (ILD) regions.
 5. Themethod of claim 1, wherein the phase change material extends a length ofthe first electrode.
 6. The method of claim 1, wherein the electroniccomponent is a poly-silicon diode.
 7. The method of claim 1, wherein thep-n junction is an access device and the phase change material is amemory element, the access device combined with the memory element to bepositioned between a plurality of first and third electrodes defining acrosspoint array.
 8. A method for integrating an electronic component inback end of the line (BEOL) processing, the method comprising: forming afirst electrode over a semiconductor substrate; forming a firstelectrically conductive material over the first electrode; forming anundoped intrinsic semiconductor layer over the first electricallyconductive material; forming a second electrically conductive materialover the undoped intrinsic semiconductor layer, where the firstelectrically conductive material, the undoped intrinsic semiconductorlayer, and the second electrically conductive material define a p-i-njunction; depositing a second electrode between a set of spacers and indirect contact with the p-i-n-junction; depositing a phase changematerial over t p-i-n junction and in direct contact with the secondelectrode; and forming a third electrode over a portion of the phasechange material.
 9. The method of claim 8, wherein the firstelectrically conductive material is an n-type poly-silicon layer. 10.The method of claim 9, wherein second electrically conductive materialis a p-type poly-silicon layer.
 11. The method of claim 8, furthercomprising forming the p-i-n junction and the second electrode betweeninterlayer dielectric (ILD) regions.
 12. The method of claim 8, whereinthe phase change material extends a length of the first electrode and alength of the first electrically conductive material.
 13. The method ofclaim 8, wherein the electronic component is a poly-silicon diode. 14.The method of claim 8, wherein the p-i-n junction is an access deviceand the phase change material is a memory element, the access devicecombined with the memory element to be positioned between a plurality offirst and third electrodes defining a crosspoint array.
 15. Asemiconductor structure for integrating an electronic component in backend of the line (BEOL) processing, the structure comprising: a firstelectrode disposed over a semiconductor substrate; a first electricallyconductive material disposed over a portion of the first electrode; asecond electrically conductive material disposed over the firstelectrically conductive material, where the first and secondelectrically conductive materials define a p-n junction; a secondelectrode located between a set of spacers and in direct contact withthe p-n-junction; a phase change material located over the p-n junctionand in direct contact with the second electrode; and a third electrodedisposed over a portion of the phase change material.
 16. Thesemiconductor structure of claim 15, wherein the first electricallyconductive material is an n-type poly-silicon layer.
 17. Thesemiconductor structure of claim 16, wherein second electricallyconductive material is a p-type poly-silicon layer.
 18. Thesemiconductor structure of claim 15, wherein the p-n junction and thesecond electrode are disposed between interlayer dielectric (ILD)regions.
 19. The semiconductor structure of claim 15, wherein the phasechange material extends a length of the first electrode.
 20. Thesemiconductor structure of claim 15, wherein the electronic component isa poly-silicon diode.